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A-GRADE Electronic Co., Ltd.

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Transistor-FET, MOSFET

Transistor-FET, MOSFET
Product Details

How about Nanjing Electronics blank recycling IC ? Shenzhen Quanyi Electronic Technology Co., Ltd. provides a variety of inventory business solutions to meet customer needs.

Let's say our products are transistors-FET, MOSFET

Product model; LSIC1MO170E1000

TO-247-3L

Detailed description of through-hole-N-channel-1700V-5A (Tc) -54W (Tc) -TO-247-3L

FET type N-channel

Technology SiCFET (Silicon Carbide)

Drain-Source Voltage (Vdss) 1700V

Current-Continuous Drain (Id) (at 25 ° C) 5A (Tc)

Driving voltage (Max Rds On, Min Rds On) 15V, 20V

Rds On (Max) at different Id, Vgs 1 ohm @ 2A, 20V

Vgs (th) (maximum) at different Ids 4V @ 1mA

Gate Charge (Qg) at Different Vgs (Maximum) 15nC @ 20V

Vgs (maximum) + 22V, -6V

Input Capacitance at Different Vds (Ciss) (Maximum) 200pF @ 1000V

FET function-

Power dissipation (maximum) 54W (Tc)

Working temperature -55 ° C ~ 150 ° C (TJ)

Hot Tags: Transistor-FET, MOSFET
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